PR
ion. ange.
h
icat
ecif ct to c
l sp
e
fina e subj
ot a its ar
is n
m
This etric li
e:
otic param
N
e
Som
IMI
EL
ARY
N
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63814P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
PIN CONFIGURATION
IN1
→
IN2
→
→
INz3
INPUT
IN4
→
IN5
→
IN6
→
IN7
→
1
2
3
4
5
6
7
8
16
→
O1
15
→
O2
14
→
O3
13
→
O4
12
→O5
11
→
O6
10
→
O7
9
DESCRIPTION
M63814P/FP/GP/KP are seven-circuit Single transistor ar-
rays with clamping diodes. The circuits are made of NPN
transistors. Both the semiconductor integrated circuits per-
form high-current driving with extremely low input-current
supply.
OUTPUT
FEATURES
q
Four package configurations (P, FP, GP and KP)
q
Medium breakdown voltage (BV
CEO
≥
35V)
q
Synchronizing current (I
C(max)
= 300mA)
q
With clamping diodes
q
Low output saturation voltage
q
Wide operating temperature range (Ta = –40 to +85°C)
GND
→COM
COMMOM
Package type
16P4(P)
16P2N-A(FP)
16P2S-A(GP)
16P2Z-A(KP)
CIRCUIT DIAGRAM
COM
OUTPUT
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
INPUT
10.5k
10k
GND
The seven circuits share the COM and GND.
FUNCTION
The M63814P/FP/GP/KP each have seven circuits consist-
ing of NPN transistor. A spike-killer clamping diode is pro-
vided between each output pin (collector) and COM pin
(pin9). The transistor emitters are all connected to the GND
pin (pin 8). The transistors allow synchronous flow of 300mA
collector current. A maximum of 35V voltage can be applied
between the collector and emitter.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit:
Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
I
C
V
I
I
F
V
R
Parameter
Collector-emitter voltage
Collector current
(Unless otherwise noted, Ta = –40 ~ +85
°
C)
Conditions
Output, H
Current per circuit output, L
Ratings
–0.5 ~ +35
300
–0.5 ~ +35
300
M63814P
M63814FP
M63814GP
M63814KP
35
1.47
1.00
0.80
0.78
–40 ~ +85
–55 ~ +125
Unit
V
mA
V
mA
V
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Ta = 25°C, when mounted
on board
P
d
Power dissipation
W
T
opr
T
stg
Operating temperature
Storage temperature
°C
°C
Jan. 2000
PR
ion. ange.
h
icat
ecif ct to c
l sp
e
fina e subj
ot a its ar
is n
m
This etric li
e:
otic param
N
e
Som
IMI
EL
ARY
N
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63814P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS
(Unless otherwise noted, Ta = –40 ~ +85
°
C)
Symbol
V
O
Parameter
Output voltage
M63814P
Collector current
(Current per 1 cir-
I
C
cuit when 7 circuits
are coming on si-
multaneously)
M63814GP
M63814KP
V
IN
Input voltage
M63814FP
Duty Cycle no more than 45%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
Test conditions
Limits
min
0
0
0
0
0
0
0
0
0
0
typ
—
—
—
—
—
—
—
—
—
—
max
35
250
160
250
130
250
120
250
120
30
Unit
V
mA
V
ELECTRICAL CHARACTERISTICS
(Unless otherwise noted, Ta = 25
°
C)
Symbol
V
(BR) CEO
V
CE(sat)
V
IN(on)
V
F
I
R
h
FE
Parameter
Collector-emitter breakdown voltage
Test conditions
Limits
min
35
—
—
7.5
—
—
50
typ
—
—
—
11.0
1.2
—
—
max
—
0.2
0.8
15.0
2.0
10
—
Unit
V
V
V
V
µA
—
I
CEO
= 10µA
I
IN
= 1mA, I
C
= 10mA
Collector-emitter saturation voltage
I
IN
= 2mA, I
C
= 150mA
“On” input voltage
I
IN
= 1mA, I
C
= 10mA
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
I
F
= 250mA
V
R
= 35V
V
CE
= 10V, I
C
= 10mA
SWITCHING CHARACTERISTICS
(Unless otherwise noted, Ta = 25
°
C)
Symbol
t
on
t
off
Parameter
Turn-on time
Turn-off time
C
L
= 15pF (note 1)
Test conditions
Limits
min
—
—
typ
120
240
max
—
—
Unit
ns
ns
NOTE 1 TEST CIRCUIT
INPUT
Vo
TIMING DIAGRAM
50%
Measured device
OPEN
PG
50Ω
C
L
OUTPUT
R
L
50%
INPUT
OUTPUT
50%
50%
ton
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, V
IH
= 11V
(2)Input-output conditions : R
L
= 220Ω, Vo = 35V
(3)Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
toff
Jan. 2000
PR
ion. ange.
h
icat
ecif ct to c
l sp
e
fina e subj
ot a its ar
is n
m
This etric li
e:
otic param
N
e
Som
IMI
EL
ARY
N
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63814P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
2.0
Power dissipation Pd (W)
Input Characteristics
4
Ta = –40°C
Input current
I
I
(mA)
1.5
M63814P
3
Ta = 25°C
1.0
M63814FP
M63814GP
M63814KP
0.744
0.520
0.418
0.406
2
Ta = 85°C
0.5
1
0
0
25
50
75 85
100
0
0
5
10
15
20
25
30
Ambient temperature Ta (°C)
Duty Cycle-Collector Characteristics
(M63814P)
400
400
Input voltage
V
I
(V)
Duty Cycle-Collector Characteristics
(M63814P)
Collector current Ic (mA)
Collector current Ic (mA)
300
1~4
5
6
7
300
1~2
3
4
200
200
5
6
7
•The
collector current values
represent the current per circuit.
•Repeated
frequency
≥
10Hz
•The
value the circle represents the value of
the simultaneously-operated circuit.
•Ta
= 85°C
100
0
0
•The
collector current values
represent the current per circuit.
•Repeated
frequency
≥
10Hz
•The
value the circle represents the value of
the simultaneously-operated circuit.
•Ta
= 25°C
100
20
40
60
80
100
0
0
20
40
60
80
100
Duty cycle (%)
Duty Cycle-Collector Characteristics
(M63814FP)
400
400
Duty cycle (%)
Duty Cycle-Collector Characteristics
(M63814FP)
Collector current Ic (mA)
Collector current Ic (mA)
300
1~3
4
5
6
7
•The
collector current values
represent the current per circuit.
•Repeated
frequency
≥
10Hz
•The
value the circle represents the value of
the simultaneously-operated circuit.
•Ta
= 25°C
300
1
2
200
200
100
100
•The
collector current values
represent the current per circuit.
•Repeated
frequency
≥
10Hz
•The
value the circle represents the value of
the simultaneously-operated circuit.
•Ta
= 85°C
3
4
5
6
7
0
0
20
40
60
80
100
0
0
20
40
60
80
100
Duty cycle (%)
Duty cycle (%)
Jan. 2000
PR
ion. ange.
h
icat
ecif ct to c
l sp
e
fina e subj
ot a its ar
is n
m
This etric li
e:
otic param
N
e
Som
IMI
EL
ARY
N
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63814P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Duty Cycle-Collector Characteristics
(M63814GP/KP)
400
400
Duty Cycle-Collector Characteristics
(M63814GP/KP)
Collector current Ic
(mA)
300
1~2
3
4
5
6
7
•The
collector current values
represent the current per circuit.
•Repeated
frequency
≥
10Hz
•The
value the circle represents the value of
the simultaneously-operated circuit.
•Ta
= 25°C
Collector current Ic
(mA)
300
1
2
200
200
100
100
•The
collector current values
represent the current per circuit.
•Repeated
frequency
≥
10Hz
•The
value the circle represents the value of
the simultaneously-operated circuit.
•Ta
= 85°C
3
4
56
7
0
0
20
40
60
80
100
0
0
20
40
60
80
100
Duty cycle (%)
Output Saturation Voltage
Collector Current Characteristics
250
Ta = 25°C
I
B
= 2mA
I
B
= 3mA
Duty cycle (%)
Output Saturation Voltage
Collector Current Characteristics
100
Ta = 25°C V
I
= 28V
V
I
= 24V
Collector current Ic (mA)
Collector current Ic (mA)
200
I
B
= 1.5mA
80
V
I
= 20V
V
I
= 16V
150
I
B
= 1mA
60
V
I
= 12V
V
I
= 8V
100
I
B
= 0.5mA
40
20
50
0
0
0.2
0.4
0.6
0.8
0
0
0.05
0.10
0.15
0.20
Output saturation voltage V
CE(sat)
(V)
Output Saturation Voltage
Collector Current Characteristics
100
I
I
= 2mA
Output saturation voltage V
CE(sat)
(V)
DC Amplification Factor
Collector Current Characteristics
10
3
7
5
3
2
V
CE
10V
Ta = 25°C
Collector current Ic (mA)
80
Ta = –40°C
Ta = 25°C
Ta = 85°C
60
DC amplification factor h
FE
0.20
10
2
7
5
3
2
40
20
0
0
0.05
0.10
0.15
10
1
10
0
2 3 5 7
10
1
2 3 5 7
10
2
2 3 5 7
10
3
Collector current Ic (mA)
Output saturation voltage V
CE(sat)
(V)
Jan. 2000
PR
ion. ange.
h
icat
ecif ct to c
l sp
e
fina e subj
ot a its ar
is n
m
This etric li
e:
otic param
N
e
Som
IMI
EL
ARY
N
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63814P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Grounded Emitter Transfer Characteristics
50
V
CE
= 4V
Grounded Emitter Transfer Characteristics
250
V
CE
= 4V
Ta = 85°C
Collector current Ic
(mA)
Collector current Ic
(mA)
40
200
150
Ta = 25°C
30
Ta = 85°C
20
Ta = –40°C
Ta = 25°C
100
50
Ta = –40°C
10
0
0
1.0
2.0
3.0
4.0
5.0
0
0
4
8
12
16
20
Input voltage V
I
(V)
Input voltage V
I
(V)
Clamping Diode Characteristics
250
Forward bisa current
I
F
(mA)
200
150
Ta = 85°C
100
Ta = 25°C
Ta = –40°C
50
0
0
0.4
0.8
1.2
1.6
2.0
Forward bias voltage V
F
(V)
Jan. 2000
微控制器 MCU
